Current status of GaN crystal growth by sublimation sandwich technique
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چکیده
منابع مشابه
GaN epitaxial layers grown on WI-SIC by the sublimation sandwich technique
We report on the structural and optical properties of GaN epitaxial layers grown on GH-Sic. We employed the sublimation sandwich method to grow single crystal layers at high growth rates with free carrier concentrations of 2 X 1Oi7 cmw3. Very narrow x-ray diffraction peaks of the GaN (0002) plane are obtained indicating the high quality of this system. These tidings are directly reflected in th...
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ژورنال
عنوان ژورنال: MRS Internet Journal of Nitride Semiconductor Research
سال: 1998
ISSN: 1092-5783
DOI: 10.1557/s1092578300001228